
ENABLING DISRUPTIVE TECHNOLOGIES WITH FUNDAMENTAL SCIENCE IN NEW MATERIALS
HIGHER SAFETY
LONGER CYCLE LIFE
HIGHER ENERGY DENSITY
HIGER CHARGE SPEED
LOWER COST

HIGHER SAFETY
LONGER CYCLE LIFE
HIGHER ENERGY DENSITY
HIGER CHARGE SPEED
LOWER COST
3rd Generation Materials
GSR Energy is working on R&D of next generation materials:
-
LMN-NTO batteries for 10C-60C fast charging
-
800KV subsea cable to transport the electron over 1000km with 3% losses
-
Large Scale H2 storage for transportation at ambient conditions
GSR NTO Battery Material

GSR 800KV Testing Lab

GSR LOHC H2 Carriers

HIGHER ENERGY DENSITY
Power Semiconductors
GSR Energy is developing energy storage power conversion systems (AC-DC, DC-DC) using a technology portfolio including silicon, silicon carbide and gallium nitride.

SILICON CARBIDE
Silicon carbide (SiC), a semiconductor compound, belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.
GALLIUM NITRIDE
Gallium nitride (GaN), a semiconductor compound, belongs to the wide band gap (WBG) family of materials. GaN-based electronic components offer a number of important advantages over silicon devices, including more compact size, higher power density, higher efficiency, lower switching losses, and better thermal management. These factors are critical to meeting the increasingly stringent requirements associated with high-power and high-density applications, such as converters, inverters, radio frequency (RF) devices, amplifiers, power supplies and chargers.