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ENABLING DISRUPTIVE TECHNOLOGIES WITH FUNDAMENTAL SCIENCE IN NEW MATERIALS

HIGHER SAFETY
 

LONGER CYCLE LIFE

HIGHER ENERGY DENSITY

HIGER CHARGE SPEED

LOWER COST

绝对优势.jpg

HIGHER SAFETY
 

LONGER CYCLE LIFE

HIGHER ENERGY DENSITY

HIGER CHARGE SPEED

LOWER COST

3rd Generation Materials

GSR Energy is working on R&D of next generation materials:

  1. LMN-NTO batteries for 10C-60C fast charging

  2. 800KV subsea cable to transport the electron over 1000km with 3% losses

  3. Large Scale H2 storage for transportation at ambient conditions

 GSR NTO Battery Material

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 GSR 800KV Testing Lab

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 GSR LOHC H2 Carriers

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HIGHER ENERGY DENSITY

Power Semiconductors

GSR Energy is developing energy storage power conversion systems (AC-DC, DC-DC) using a technology portfolio including silicon, silicon carbide and gallium nitride. 

半導體

SILICON CARBIDE

Silicon carbide (SiC), a semiconductor compound, belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices.

GALLIUM NITRIDE

Gallium nitride (GaN), a semiconductor compound, belongs to the wide band gap (WBG) family of materials. GaN-based electronic components offer a number of important advantages over silicon devices, including more compact size, higher power density, higher efficiency, lower switching losses, and better thermal management. These factors are critical to meeting the increasingly stringent requirements associated with high-power and high-density applications, such as converters, inverters, radio frequency (RF) devices, amplifiers, power supplies and chargers.

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